Title :
IGCTs: High-Power Technology for power electronics applications
Author :
Nistor, I. ; Wikström, T. ; Scheinert, M.
Author_Institution :
Corp. Res., ABB Switzerland Ltd., Dattwil, Switzerland
Abstract :
This paper focuses on the most recent technical developments in integrated gate commutated thyristors. Improved safe operating area (SOA) of a new IGCT chip set based on ABB´s high power technology (HPT) platform with a rated voltage of 10 kV is presented. A matching 10 kV freewheeling diode is also reported. Combined, these developments open the door to new applications of silicon IGCTs reaching voltage levels of 7.2 kV RMS or more.
Keywords :
power electronics; ABB high power technology; freewheeling diode; high-power technology; integrated gate commutated thyristors; power electronics applications; safe operating area; voltage 10 kV; voltage 7.2 kV; Circuits; Inductance; MOSFETs; Medium voltage; Paper technology; Power electronics; Power semiconductor switches; Semiconductor optical amplifiers; Silicon; Thyristors; FACTS; Integrated gate controlled thyristor; hybrid circuit breaker; medium voltage drive; power semiconductors;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336607
