Title :
Multi-band simulation of interband tunneling devices reflecting realistic band structure
Author :
Ogawa, Matsuto ; Tominaga, Ryuichiro ; Miyoshi, Tanroku
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
Abstract :
We have studied quantum transport in a Si interband tunneling diode (ITD) based upon a tight-binding nonequilibrium Green´s function method. In the simulation, an empirical tight-binding theory has been used to take into account realistic band structures. Comparison has been made between the results of our multiband (MB) model and those of conventional two-band (2B) model. It is found that the current-voltage (I-V) characteristics of the Si ITD have considerably smaller peak current density than the 2B model, since our MB model reflects the nature of indirect gap structure
Keywords :
Green´s function methods; current density; elemental semiconductors; energy gap; quantum interference devices; semiconductor device models; silicon; tight-binding calculations; tunnel diodes; I-V characteristics; Si; Si ITD; Si interband tunneling diode; band structure; current-voltage characteristics; empirical tight-binding theory; indirect gap structure; interband tunneling devices; multi-band simulation; multiband model; peak current density; quantum transport; simulation; tight-binding nonequilibrium Green´s function method; two-band model; Acceleration; Atomic layer deposition; Current density; Electrons; Energy consumption; Facsimile; Nearest neighbor searches; Semiconductor devices; Semiconductor diodes; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871208
