Simulation of gallium-arsenide based high electron mobility transistors

Author

Quay, R. ; Massler, H. ; Kellner, W. ; Grasser, T. ; Palankovski, V. ; Selberherr, S.

Author_Institution

Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg, Germany

fYear

2000

fDate

2000

Firstpage

74

Lastpage

77

Abstract

We present results for hydrodynamic simulations of pseudomorphic AlGaAs-InGaAs-GaAs high electron mobility transistors (HEMTs) obtained by the MINIMOS-NT two-dimensional device simulator. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between l_g=140 nm and l_g=300 nm is carried out. Several aspects, including thermal and breakdown effects, the insulator-semiconductor interface, and the Schottky contact are considered

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; gallium arsenide; indium compounds; microwave field effect transistors; power HEMT; semiconductor device breakdown; semiconductor device models; semiconductor-insulator boundaries; thermal analysis; 140 nm; 300 nm; AlGaAs-InGaAs-GaAs; HEMT gate-length; HEMT power devices; MINIMOS-NT 2D device simulator; Schottky contact; breakdown effects; gallium-arsenide based high electron mobility transistors; hydrodynamic simulation; insulator-semiconductor interface; pseudomorphic AlGaAs-InGaAs-GaAs HEMTs; pseudomorphic AlGaAs-InGaAs-GaAs high electron mobility transistors; simulation; thermal effects; Equations; Foundries; Gallium arsenide; HEMTs; MODFETs; Power measurement; Radio frequency; Solid modeling; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871210

Filename

871210