Periodic steady-state analysis for coupled device and circuit simulation

Author

Hu, Yutao ; Mayaram, Kartikeya

Author_Institution

Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA

fYear

2000

fDate

2000

Firstpage

90

Lastpage

93

Abstract

A time-domain shooting method based coupled device and circuit simulator suitable for accurate simulation of RF circuits is presented. The simulator supports accurate numerical models for diodes, BJTs, and MOSFETs. These combined with the accelerated steady-state method allow accurate and efficient steady-state simulation of RF circuits

Keywords

MOSFET; circuit simulation; integrated circuit modelling; microwave bipolar transistors; microwave diodes; microwave field effect transistors; microwave integrated circuits; semiconductor device models; time-domain analysis; BJTs; MOSFETs; RF circuit simulation; RF circuits; accelerated steady-state method; coupled device/circuit simulation; diodes; efficient steady-state simulation; numerical models; periodic steady-state analysis; time-domain shooting method; Acceleration; Circuit simulation; Coupling circuits; Diodes; MOSFETs; Numerical models; Numerical simulation; Radio frequency; Steady-state; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871215

Filename

871215