A l0mW Low-Noise Amplifier Design for 5.5GHz Wireless Communication Systems

Author

Kebaisy, Iyad ; Domann, Sven ; Meinerzhagen, Bernd

Author_Institution

BST, TU-Braunschweig, Braunschweig

Volume

2

fYear

0

fDate

0-0 0

Firstpage

2577

Lastpage

2582

Abstract

Important aspects and simulation results related to the RF integrated circuit design of a single-ended low-noise amplifier (LNA) are presented and discussed. The simulated values for the power consumption, input-IP3 and noise figure (NF) are 10mW, 0.32dBm and 1.53dB, at the center frequency fc = 5.5GHz, respectively. An experimentally extensively verified design kit for a 0.25mum BiCMOS technology is used for all components and devices except for the inductors, which are assumed to be ideal. A well established CMOS LNA circuit topology was chosen, completely re-dimensioned and optimized to meet the desired design specifications for WLAN 802.11a

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; circuit simulation; low noise amplifiers; microwave amplifiers; microwave integrated circuits; network topology; wireless LAN; 0.25 micron; 1.53 dB; 5.5 GHz; BiCMOS technology; CMOS LNA circuit topology; RF CMOS integrated circuits; RF integrated circuit design; S-parameters; SpectreRF; WLAN 802.11a; input-IP3; noise figure; power consumption; single-ended low-noise amplifier; wireless communication systems; BiCMOS integrated circuits; CMOS technology; Circuit simulation; Energy consumption; Integrated circuit synthesis; Low-noise amplifiers; Noise figure; Noise measurement; Radio frequency; Wireless communication; 1dB CP and IP3; LNA; NF (noise figure); RF CMOS integrated circuits; S-parameters; SpectreRF; WLAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Information and Communication Technologies, 2006. ICTTA '06. 2nd

Conference_Location

Damascus

Print_ISBN

0-7803-9521-2

Type

conf

DOI

10.1109/ICTTA.2006.1684815

Filename

1684815