DocumentCode :
2451182
Title :
Functions of parameter distribution at the film evaporation in nanoelectronics
Author :
Orlikov, N.L. ; Orlikov, L.N. ; Borodin, M.V.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectronics, Russia
fYear :
2002
fDate :
2002
Firstpage :
49
Lastpage :
50
Abstract :
For the development of nanoelectronic devices it is important to ensure uniformity in the alloyed atoms concentration distribution under equal energy conditions of the film embryo. In real conditions of molecular-beam epitaxy from several vaporizers, when the evaporation temperature is the vapour pressure ~1 Pa, and pressure of residual gases is 10-6-10-8 Pa, the vapour generation differs from the classical equiprobable law and is carried out on the functional law. The indicated functions permit us to simulate the distribution law for film thickness on a substrate and to correct the mass transfer for a change of system parameters. The analysis of received results shows the accuracy of the chosen approach for synthesis of films by molecular-beam epitaxy method on gallium arsenide substrates
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; nanotechnology; semiconductor epitaxial layers; semiconductor growth; GaAs; MBE growth; concentration distribution; equal energy conditions; nanoelectronics; parameter distribution; Atomic layer deposition; Atomic measurements; Control systems; Embryo; Epitaxial growth; Molecular beam epitaxial growth; Nanoelectronics; Radio control; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2002. SIBEDEM 2002. The IEEE-Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
0-7803-7274-3
Type :
conf
DOI :
10.1109/SIBEDM.2002.998062
Filename :
998062
Link To Document :
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