Lateral epitaxial overgrowth of and defect reduction in GaN thin films

Author

Davis, Robert F. ; Nam, O.-H. ; Bremser, M.D. ; Zheleva, T.

Author_Institution

Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

360

Abstract

The lateral overgrowth of GaN stripes patterned in a SiO₂ mask deposited on GaN film/AlN buffer layer/6H-SiC(0001) substrates was investigated. To achieve lateral overgrowth, the second layer of GaN was deposited on the initial underlying GaN layer through the windows in the SiO₂ mask. The deposited material grew vertically to the top of the mask and then both laterally over the mask and vertically until the lateral growth fronts from many different windows coalesced and formed a continuous layer

Keywords

III-V semiconductors; gallium compounds; optical films; semiconductor epitaxial layers; substrates; vapour phase epitaxial growth; AlN; GaN; GaN film/AlN buffer layer/6H-SiC(0001) substrates; GaN stripes; GaN thin films; SiO₂; SiO₂ mask; continuous layer; defect reduction; lateral epitaxial overgrowth; lateral growth fronts; lateral overgrowth; underlying GaN layer; Atomic force microscopy; Atomic layer deposition; Buffer layers; Gallium nitride; Rough surfaces; Scanning electron microscopy; Substrates; Temperature; Transistors; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737879

Filename

737879