Title :
Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides
Author :
Asenov, A. ; Kaya, S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
In this paper we use the density gradient (DG) simulation approach to study, in 3D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the quantum mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples
Keywords :
MOSFET; correlation methods; dielectric thin films; fluctuations; gradient methods; interface roughness; interface structure; quantum interference phenomena; semiconductor device models; SiO2-Si; decanano MOSFETs; density gradient simulation; interface auto-correlation function; local oxide thickness fluctuations; oxide interface roughness; oxide thickness fluctuations; quantum mechanical effects; random 2D interface surfaces; simulation; threshold voltage; threshold voltage fluctuations; ultrathin gate oxides; Atomic layer deposition; Boundary conditions; Electrons; Fluctuations; MOSFETs; Poisson equations; Quantum mechanics; Rough surfaces; Surface roughness; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871226
