Title :
Growth and characterization of a p-n junction diode made of cubic GaN
Author :
Tanaka, Hidenao ; Nakadaira, Atsushi
Author_Institution :
NTT Integrated Inf. & Energy Syst. Labs., Tokyo, Japan
Abstract :
We fabricated a diode structure made of cubic GaN. There was a peak at the interface between Mg-doped GaN and undoped GaN in the electron beam induced current (EBIC) signal. We think this is evidence of a depletion layer caused by the p-n junction. This result increases the likelihood of being able to use cubic group ITI nitrides for LEDs and LDs
Keywords :
EBIC; MOCVD; gallium compounds; magnesium; optical fabrication; p-n junctions; photodiodes; vapour phase epitaxial growth; GaN; GaN:Mg; LDs; LEDs; Mg-doped GaN; cubic GaN; cubic group ITI nitrides; depletion layer; diode structure fabrication; electron beam induced current signal; laser diodes; p-n junction; p-n junction diode; undoped GaN; Aluminum gallium nitride; Electrodes; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gallium nitride; Gold; P-n junctions; Semiconductor diodes; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737883
