• DocumentCode
    2451466
  • Title

    Digital fuse circuit based on floating gate technology in a standard CMOS process

  • Author

    Craciun, Mihai ; Bogdan, Daniela

  • Author_Institution
    ON Semicond., Bucharest, Romania
  • Volume
    2
  • fYear
    2009
  • fDate
    12-14 Oct. 2009
  • Firstpage
    541
  • Lastpage
    544
  • Abstract
    This paper presents a digital fuse circuit based on floating gate technology fabricated in a conventional CMOS process. It is basically a non-volatile memory cell that has programming/erasing capabilities implemented by Fowler-Nordheim tunneling. Concept design advantages are sustained by simulation and testing results.
  • Keywords
    CMOS digital integrated circuits; digital circuits; random-access storage; CMOS; Fowler-Nordheim tunneling; digital fuse circuit; floating gate technology; nonvolatile memory cell; CMOS process; CMOS technology; Circuits; Electrons; Fuses; Logic programming; MOSFETs; Nonvolatile memory; Tunneling; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2009. CAS 2009. International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-4413-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2009.5336654
  • Filename
    5336654
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2451466