Title :
Extreme environment temperature sensor based on silicon carbide Schottky Diode
Author :
Josan, Ioana ; Boianceanu, C. ; Brezeanu, G. ; Obreja, V. ; Avram, Marioara ; Puscasu, D. ; Ioncea, A.
Author_Institution :
Univ. Politeh., Bucharest, Romania
Abstract :
A high performance temperature sensor based silicon carbide power Schottky Barrier Diodes are developed for high temperature and harsh environment applications. The linear temperature dependence of the forward voltage and the exponential variation of the reverse voltage with the temperature are used as thermal sensing. The sensitivity is in range of 1.6 - 2.1 mV/degC from forward bias and about 5 uA/degC based on reverse characteristics.
Keywords :
Schottky barriers; Schottky diodes; carbon compounds; silicon alloys; temperature sensors; extreme environment temperature sensor; high performance temperature sensor; silicon carbide Schottky diode; silicon carbide power Schottky barrier diodes; thermal sensing; Research and development; Schottky barriers; Schottky diodes; Semiconductor diodes; Sensor phenomena and characterization; Silicon carbide; Temperature distribution; Temperature measurement; Temperature sensors; Voltage;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336658
