Well-tempered MOSFETs: 1D versus 2D quantum analysis

Author

Abramo, A. ; Selmi, L. ; Yu, Z. ; Dutton, R.W.

Author_Institution

DIEGM, Udine Univ., Italy

fYear

2000

fDate

2000

Firstpage

188

Lastpage

191

Abstract

This paper presents the two-dimensional quantum mechanical simulation of scaled “well-tempered MOSFETs” (Assad et al, IEDM Tech. Dig., p. 547, 1999, and IEEE trans. Electron Dev. vol. 47, p. 232, 2000) featuring different effective channel lengths in the deep sub-micron range. The simulation results were obtained by means of a two-dimensional Schrodinger solver that had been previously applied to idealized MOS structures. Comparison between one- and two dimensional approaches is presented, and the difference between the two models are highlighted

Keywords

MOSFET; Schrodinger equation; nanotechnology; semiconductor device models; 1D quantum analysis; 2D Schrodinger solver; 2D quantum analysis; 2D quantum mechanical simulation; effective channel length; idealized MOS structures; models; nanoscale MOSFETs; scaled well-tempered MOSFETs; simulation; well-tempered MOSFETs; Analytical models; Eigenvalues and eigenfunctions; Electrons; Helium; Linear systems; MOSFET circuits; Nanoscale devices; Physics; Predictive models; Schrodinger equation;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871239

Filename

871239