Unequally Valued Emitter Ballasting Resistors Optimum Design of Multi-finger Power GeSi HBTs

Author

Jianjun, Qiu ; Wanrong, Zhang ; Dongyue, Jin ; Jingwei, Yang ; Pan, Gao ; Ying, Liu

Author_Institution

Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing

fYear

2006

fDate

26-29 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

Multi-finger structure is commonly used in microwave power GeSi HBTs (heterojunction bipolar transistors). Usually equally valued emitter ballasting resistors are added to improve thermal stability of the devices. However, self-heating and thermal coupling effects make the temperature distribution on emitter fingers non-uniform, so the equally valued ballasting resistors structure is not optimum. In this paper, an unequally valued ballasting resistors structure is presented, which could improve the uniformity of devices´ temperature distribution effectively, and decrease the highest temperature to a certain extent.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave power transistors; resistors; semiconductor materials; thermal stability; GeSi; emitter; heterojunction bipolar transistors; microwave power transistors; multifinger power GeSi HBT; self-heating effect; temperature distribution; thermal coupling effect; thermal stability; unequally valued ballasting resistors; Electronic ballasts; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Resistors; Silicon germanium; Temperature distribution; Thermal resistance; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas, Propagation & EM Theory, 2006. ISAPE '06. 7th International Symposium on

Conference_Location

Guilin

Print_ISBN

1-4244-0162-3

Electronic_ISBN

1-4244-0163-1

Type

conf

DOI

10.1109/ISAPE.2006.353246

Filename

4168287