Title :
Nuclear modeling of quantum gate leakage currents with sensitivity analysis
Author :
Schoenmaker, Wim ; Magnus, Wim
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A new formulation for gate-leakage currents due to quantum tunneling is presented. The resulting model has been inserted into software modules. The relative importance of various gate stack design parameters is investigated using DOE/RSM methods
Keywords :
CMOS integrated circuits; design of experiments; dielectric thin films; leakage currents; sensitivity analysis; surface fitting; tunnelling; CMOS downscaling; DOE methods; RSM methods; gate stack design parameters; gate-leakage currents; model; nuclear modeling; quantum gate leakage currents; quantum tunneling; sensitivity analysis; software modules; Design engineering; Dielectrics; Effective mass; Electrons; Gate leakage; Insulation; Leakage current; Resonance; Sensitivity analysis; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871243
