DocumentCode
2451615
Title
Nuclear modeling of quantum gate leakage currents with sensitivity analysis
Author
Schoenmaker, Wim ; Magnus, Wim
Author_Institution
IMEC, Leuven, Belgium
fYear
2000
fDate
2000
Firstpage
204
Lastpage
205
Abstract
A new formulation for gate-leakage currents due to quantum tunneling is presented. The resulting model has been inserted into software modules. The relative importance of various gate stack design parameters is investigated using DOE/RSM methods
Keywords
CMOS integrated circuits; design of experiments; dielectric thin films; leakage currents; sensitivity analysis; surface fitting; tunnelling; CMOS downscaling; DOE methods; RSM methods; gate stack design parameters; gate-leakage currents; model; nuclear modeling; quantum gate leakage currents; quantum tunneling; sensitivity analysis; software modules; Design engineering; Dielectrics; Effective mass; Electrons; Gate leakage; Insulation; Leakage current; Resonance; Sensitivity analysis; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location
Seattle, WA
Print_ISBN
0-7803-6279-9
Type
conf
DOI
10.1109/SISPAD.2000.871243
Filename
871243
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