Title :
Simulation of boron diffusion in strained Si1-xGex epitaxial layers
Author :
Rajendran, K. ; Schoenmaker, W. ; Decoutere, S. ; Caymax, M.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
This paper describes a simple and accurate model for boron diffusion in SiGe that was successfully implemented in TAURUS (PMEI). The comparison of the Si1-xGex samples to Si samples after rapid thermal and furnace annealing revealed a retarded B diffusion inside the strained Si1-xGex layers. The influence of the Ge content on the dopant diffusion was also measured and simulated, demonstrating that the B diffusion was found to decrease with the Ge alloy content. The model fits for various Ge percentages (both box and graded profiles) and thermal budgets. The simulation results of various Ge percentages and thermal budgets show good agreement with measurement data and the predicted B diffusivity show a reasonably low value
Keywords :
Ge-Si alloys; annealing; boron; diffusion; doping profiles; rapid thermal annealing; semiconductor epitaxial layers; semiconductor materials; semiconductor process modelling; B diffusion; B diffusivity; Ge alloy content; Ge content; Si samples; Si1-xGex samples; SiGe:B; TAURUS implementation; boron diffusion model; boron diffusion simulation; box Ge profile; dopant diffusion; furnace annealing; graded Ge profile; measurement data; rapid thermal annealing; retarded B diffusion; strained Si1-xGex epitaxial layers; strained Si1-xGex layers; thermal budgets; Boron; Capacitive sensors; Doping; Epitaxial layers; Furnaces; Germanium silicon alloys; Heterojunction bipolar transistors; Rapid thermal annealing; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871244
