Optimum node positioning in adaptive grid refinement and the Delaunay-Voronoi algorithm [semiconductor process simulation]

Author

Pladdy, C. ; Avci, I. ; Law, M.E.

Author_Institution

SWAMP Center, Florida Univ., FL, USA

fYear

2000

fDate

2000

Firstpage

222

Lastpage

224

Abstract

This paper presents a method for optimum placement of nodes in grid generation for process simulation together with an algorithm for updating the grid after each addition of a new node to ensure that the Delaunay property is satisfied. Placement of nodes is decided by considering the optimum error in evaluating the integral ∫_V C(x)dx. The best error estimate is obtained when the node coincides with the centroid (the center of mass) of its own Voronoi region and moreover when the Voronoi region is symmetric. After addition of a node, the grid is updated to maintain the Delaunay property using the Delaunay-Voronoi algorithm

Keywords

computational geometry; error analysis; mesh generation; optimisation; semiconductor process modelling; Delaunay property; Delaunay-Voronoi algorithm; Voronoi region; adaptive grid refinement; best error estimate; grid generation; grid update; integral evaluation; node addition; node placement; node-centroid coincidence; optimum error; optimum node positioning; process simulation; semiconductor process simulation; symmetric Voronoi region; Computational modeling; Ducts; Grid computing; Integral equations; Mesh generation; Taylor series;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871248

Filename

871248