• DocumentCode
    2451808
  • Title

    SOI related simulation challenges with moment based BTE solvers

  • Author

    Egley, J. L Skip ; Polsky, B. ; Min, B. ; Lyumkis, E. ; Penzin, O. ; Foisy, M.

  • Author_Institution
    DigitalDNA Labs., Motorola Inc., Austin, TX, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    241
  • Lastpage
    244
  • Abstract
    We discuss challenges particular to SOI simulation. We also show evidence of what we believe is hot carrier diffusion out of the channel near the drain, giving rise to a negative differential conductivity (NDC), or a transient region in an ID-VD curve on SOI
  • Keywords
    Boltzmann equation; MOSFET; electric current; electrical conductivity; hot carriers; method of moments; semiconductor device models; silicon-on-insulator; technology CAD (electronics); SOI MOSFETs; SOI related simulation; SOI simulation; Si-SiO2; channel hot carrier diffusion; drain I-V curve transient region; moment based BTE solvers; negative differential conductivity; transient region; Capacitance; Diodes; High definition video; Hot carriers; Hydrodynamics; MOSFETs; Modeling; Predictive models; Silicon on insulator technology; Systems engineering and theory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    0-7803-6279-9
  • Type

    conf

  • DOI
    10.1109/SISPAD.2000.871253
  • Filename
    871253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2451808