Title :
SOI related simulation challenges with moment based BTE solvers
Author :
Egley, J. L Skip ; Polsky, B. ; Min, B. ; Lyumkis, E. ; Penzin, O. ; Foisy, M.
Author_Institution :
DigitalDNA Labs., Motorola Inc., Austin, TX, USA
Abstract :
We discuss challenges particular to SOI simulation. We also show evidence of what we believe is hot carrier diffusion out of the channel near the drain, giving rise to a negative differential conductivity (NDC), or a transient region in an ID-VD curve on SOI
Keywords :
Boltzmann equation; MOSFET; electric current; electrical conductivity; hot carriers; method of moments; semiconductor device models; silicon-on-insulator; technology CAD (electronics); SOI MOSFETs; SOI related simulation; SOI simulation; Si-SiO2; channel hot carrier diffusion; drain I-V curve transient region; moment based BTE solvers; negative differential conductivity; transient region; Capacitance; Diodes; High definition video; Hot carriers; Hydrodynamics; MOSFETs; Modeling; Predictive models; Silicon on insulator technology; Systems engineering and theory;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871253
