Title :
Analysis of HBT behavior after strong electrothermal stress
Author :
Palankovski, V. ; Selberherr, S. ; Quay, R. ; Schultheis, R.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
Abstract :
We present two-dimensional simulations of one-finger power InGaP-GaAs heterojunction bipolar transistors (HBTs) before and after both electrical and thermal stress aging. It is well known that GaAs-HBTs with InGaP emitter material can be improved in terms of reliability if the emitter material covers the complete p-doped base layer forming the so-called InGaP ledge outside the active emitter. We analyze the influence of the ledge thickness and of the surface charges on the device performance and its impact on reliability. The possibility of explaining device degradation mechanisms by means of numerical simulation is of high practical importance
Keywords :
III-V semiconductors; ageing; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; numerical analysis; power bipolar transistors; semiconductor device models; semiconductor device reliability; stress analysis; surface charging; thermal stresses; 2D simulations; GaAs-HBTs; HBT behavior; InGaP emitter material; InGaP ledge formation; InGaP-GaAs; active emitter; device degradation mechanisms; device performance; electrical stress aging; electrothermal stress; ledge thickness; numerical simulation; one-finger power InGaP-GaAs HBTs; one-finger power InGaP-GaAs heterojunction bipolar transistors; p-doped base layer coverage; reliability; surface charge; thermal stress aging; Computational modeling; Current measurement; Electrons; Electrothermal effects; Gallium arsenide; Heterojunction bipolar transistors; Materials reliability; Microelectronics; Thermal stresses; Thickness measurement;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871254
