Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

Author

Eikyu, K. ; Takashino, H. ; Kidera, M. ; Teramoto, A. ; Umeda, H. ; Ishikawa, K. ; Kotani, N. ; Inuishi, M.

Author_Institution

ULSI Dev. Center, Mitsubishi Electr. Corp., Itami, Japan

fYear

2000

fDate

2000

Firstpage

257

Lastpage

260

Abstract

The physical oxide thickness of ultrathin oxides is extracted using the tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool implements a nonlinear least square solver and GUIs. A tunneling current model is incorporated into the MIDSIP-T device simulator and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φ_b=3.3 eV and m_c^*/m₀=0.41, is obtained after the extraction of various samples

Keywords

MOS capacitors; MOS integrated circuits; dielectric thin films; graphical user interfaces; least squares approximations; semiconductor device measurement; semiconductor device models; tunnelling; 3.3 eV; GUIs; MIDSIP-T device simulator; MOS capacitors; SiO₂-Si; core simulator; electrical characteristics; extraction system; extraction tool; nonlinear least square solver; physical oxide thickness; physical oxide thickness extraction; sample extraction; semiautomatic extraction; transition layer; tunneling current characteristics; tunneling current model; ultrathin oxides; unified parameter set; very thin oxide thickness; Capacitance-voltage characteristics; Electric variables; Least squares methods; MOS capacitors; MOSFETs; Oxidation; Semiconductor devices; Thickness measurement; Tunneling; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871257

Filename

871257