HiSIM: a drift-diffusion-based advanced MOSFET model for circuit simulation with easy parameter extraction

Author

Suetake, M. ; Suematsu, K. ; Nagakura, H. ; Miura-Mattausch, M. ; Mattausch, H.J. ; Kumashiro, S. ; Yamaguchi, T. ; Odanaka ; Nakayama, N.

Author_Institution

Dept. of Electr. Eng., Hiroshima Univ., Japan

fYear

2000

fDate

2000

Firstpage

261

Lastpage

264

Abstract

We present here the MOSFET model HiSIM (Hiroshima University Starc IGFET model). As HiSIM employs the drift-diffusion approximation and preserves correct modeling of the surface potential in the channel, it is not only accurate, but additionally, model parameter number is small, parameter interdependence is removed, and parameter extraction becomes easy. Measured current-voltage characteristics of advanced MOSFETs are thus reproduced with only 19 model parameters

Keywords

MOSFET; carrier mobility; circuit simulation; semiconductor device models; surface potential; HiSIM MOSFET model; HiSIM drift-diffusion-based MOSFET model; Hiroshima University Starc IGFET model; MOSFET model; MOSFETs; channel surface potential modeling; circuit simulation; current-voltage characteristics; drift-diffusion approximation; model parameter number; model parameters; parameter extraction; parameter interdependence; Circuit simulation; Current-voltage characteristics; Doping profiles; Equations; Impurities; Leakage current; MOSFET circuits; Parameter extraction; Semiconductor process modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871258

Filename

871258