Title :
Simulation of multiple-bit soft errors induced by cosmic ray neutrons in DRAMs
Author :
Tosaka, Y. ; Satoh, S.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Although it has been shown that cosmic ray neutrons play an important role in soft error (SE) phenomena, some important issues in neutron-induced SE phenomena are still to be clarified. In this paper, neutron-induced multiple-bit SEs in 16 Mb DRAMs are investigated numerically using the Neutron-Induced Soft Error Simulator (NISES), and simulated results are compared to experimental data. Scaling effects on multiple-bit SEs, effects of configuration patterns on double-bit SE rates, and the influence of multiple-bit SEs on an error correction code are discussed
Keywords :
DRAM chips; circuit simulation; cosmic ray neutrons; error correction codes; integrated circuit measurement; integrated circuit modelling; neutron effects; DRAMs; NISES; Neutron-Induced Soft Error Simulator; SE phenomena; configuration pattern effects; cosmic ray neutrons; double-bit SE rates; error correction code; multiple-bit SEs; multiple-bit soft errors; neutron-induced SE phenomena; neutron-induced multiple-bit SEs; scaling effects; simulation; soft error phenomena; Atmospheric measurements; Boundary conditions; Databases; Error correction codes; Neutrons; Particle beams; Power supplies; Random access memory; Testing; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871259
