DocumentCode :
2451966
Title :
A high signal swing pass-transistor logic using surrounding gate transistor
Author :
Endoh, Tetuo ; Funaki, Toshihiko ; Sakuraba, Hiroshi ; Masuoka, Fujio
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear :
2000
fDate :
2000
Firstpage :
273
Lastpage :
275
Abstract :
In this paper, pass-transistor logic (PTL) using surrounding gate transistors (SGT) is reported for the first time. This SGT-based PTL brings out the latent abilities of the PTL, especially improvement of the area occupation by 74% and the power-delay product by 70% at a supply voltage of 1 V compared to bulk MOSFET-based PTL
Keywords :
integrated circuit design; integrated circuit modelling; integrated logic circuits; logic design; 1 V; PTL; SGT; SGT-based PTL; area occupation; bulk MOSFET-based PTL; high signal swing pass-transistor logic; pass-transistor logic; power-delay product; supply voltage; surrounding gate transistor; Adders; Capacitance; Delay effects; Logic devices; Logic gates; Low voltage; MOSFET circuits; Power dissipation; Stability; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
Type :
conf
DOI :
10.1109/SISPAD.2000.871261
Filename :
871261
Link To Document :
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