DocumentCode
2451966
Title
A high signal swing pass-transistor logic using surrounding gate transistor
Author
Endoh, Tetuo ; Funaki, Toshihiko ; Sakuraba, Hiroshi ; Masuoka, Fujio
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear
2000
fDate
2000
Firstpage
273
Lastpage
275
Abstract
In this paper, pass-transistor logic (PTL) using surrounding gate transistors (SGT) is reported for the first time. This SGT-based PTL brings out the latent abilities of the PTL, especially improvement of the area occupation by 74% and the power-delay product by 70% at a supply voltage of 1 V compared to bulk MOSFET-based PTL
Keywords
integrated circuit design; integrated circuit modelling; integrated logic circuits; logic design; 1 V; PTL; SGT; SGT-based PTL; area occupation; bulk MOSFET-based PTL; high signal swing pass-transistor logic; pass-transistor logic; power-delay product; supply voltage; surrounding gate transistor; Adders; Capacitance; Delay effects; Logic devices; Logic gates; Low voltage; MOSFET circuits; Power dissipation; Stability; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location
Seattle, WA
Print_ISBN
0-7803-6279-9
Type
conf
DOI
10.1109/SISPAD.2000.871261
Filename
871261
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