DocumentCode :
2452045
Title :
Loading effects in resistance scaling
Author :
Elmquist, R.E. ; Dziuba, R.F.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear :
1996
fDate :
17-21 June 1996
Firstpage :
334
Lastpage :
335
Abstract :
Power loading effects in dc resistance references are not well understood even for the most commonly used high precision standards. This paper examines loading effects and their contribution to the uncertainty of recent NIST comparisons of the quantum Hall effect and calculable capacitor.
Keywords :
electric resistance measurement; measurement errors; measurement standards; quantum Hall effect; resistors; NIST comparisons; calculable capacitor; dc resistance references; high precision standards; power loading effects; quantum Hall effect; resistor; scaling measurements; transfer standards; uncertainty; Current measurement; Electric resistance; Electrical resistance measurement; Measurement standards; NIST; Power measurement; Resistors; Temperature distribution; Temperature measurement; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
Type :
conf
DOI :
10.1109/CPEM.1996.547101
Filename :
547101
Link To Document :
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