• DocumentCode
    2452085
  • Title

    Development of the 2nd generation SVCS using IEGT

  • Author

    Tobita, Masayuki ; Kanai, Takeo ; Yoshino, Teruo

  • Author_Institution
    Power Electron. Equip. Dept, Toshiba Corp., Tokyo, Japan
  • Volume
    3
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    1112
  • Abstract
    A new semiconductor power device, IEGT (injection enhanced gate transistor) has been developed by TOSHIBA Semiconductor Company. It is a metal oxide gate semiconductor device and offers advantages compared with the conventional GTO device, the smaller gate power and the higher turn-on and turn-off capability. A converter using the IEGT has been successfully developed. It will be used in static VAr compensators etc. This paper describes the design, test results and advantages of the developed 21 MVA static VAr compensator using IEGT compared with the GTO converter
  • Keywords
    power convertors; power field effect transistors; static VAr compensators; 21 MVA; GTO converter; GTO device; IEGT; TOSHIBA Semiconductor Company; higher turn-off capability; higher turn-on capability; injection enhanced gate transistor; metal oxide gate semiconductor device; semiconductor power device; static VAr compensator; Anodes; Assembly; Bridge circuits; Circuit testing; Inductors; Semiconductor device packaging; Semiconductor optical amplifiers; Snubbers; Static VAr compensators; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Conversion Conference, 2002. PCC-Osaka 2002. Proceedings of the
  • Conference_Location
    Osaka
  • Print_ISBN
    0-7803-7156-9
  • Type

    conf

  • DOI
    10.1109/PCC.2002.998128
  • Filename
    998128
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2452085