Title :
Development of the 2nd generation SVCS using IEGT
Author :
Tobita, Masayuki ; Kanai, Takeo ; Yoshino, Teruo
Author_Institution :
Power Electron. Equip. Dept, Toshiba Corp., Tokyo, Japan
Abstract :
A new semiconductor power device, IEGT (injection enhanced gate transistor) has been developed by TOSHIBA Semiconductor Company. It is a metal oxide gate semiconductor device and offers advantages compared with the conventional GTO device, the smaller gate power and the higher turn-on and turn-off capability. A converter using the IEGT has been successfully developed. It will be used in static VAr compensators etc. This paper describes the design, test results and advantages of the developed 21 MVA static VAr compensator using IEGT compared with the GTO converter
Keywords :
power convertors; power field effect transistors; static VAr compensators; 21 MVA; GTO converter; GTO device; IEGT; TOSHIBA Semiconductor Company; higher turn-off capability; higher turn-on capability; injection enhanced gate transistor; metal oxide gate semiconductor device; semiconductor power device; static VAr compensator; Anodes; Assembly; Bridge circuits; Circuit testing; Inductors; Semiconductor device packaging; Semiconductor optical amplifiers; Snubbers; Static VAr compensators; Voltage control;
Conference_Titel :
Power Conversion Conference, 2002. PCC-Osaka 2002. Proceedings of the
Conference_Location :
Osaka
Print_ISBN :
0-7803-7156-9
DOI :
10.1109/PCC.2002.998128
