Title :
A new and efficient approach to the analysis and design of GaAs MESFET microwave oscillators
Author :
Cheng, K.K.M. ; Everard, J.K.A.
Author_Institution :
Dept. of Electr. & Electron. Eng., King´´s Coll., London, UK
Abstract :
A novel technique for the analysis and design of oscillators is presented. The solution is based on Volterra series, and the resulting nonlinear system is solved by an efficient algorithm. The novel feature is the way in which the oscillator circuit is decomposed so that the determination of the nonlinear kernels can be evaluated much more easily. This method is fast, requires no initial guess, has good convergence properties, and can be implemented on a computer in a straightforward manner. Measurements performed on a microwave GaAs oscillator show close agreement with the predicted results.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit CAD; gallium arsenide; microwave oscillators; nonlinear network analysis; solid-state microwave circuits; MESFET microwave oscillators; Volterra series; design of oscillators; good convergence properties; microwave GaAs oscillator; nonlinear kernels; semiconductors; Circuits; Frequency; Gallium arsenide; Impedance; Kernel; MESFETs; Microwave oscillators; Nonlinear equations; Power system harmonics; Signal analysis;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99813