Title :
Limitations of the Open-Circuit Voltage Decay technique applied to 4H-SiC diodes
Author :
Bellone, Salvatore ; Albanese, Loredana Freda ; Licciardo, Gian Domenico
Author_Institution :
Dept. of Inf. & Electr. Eng. (DIIIE), Univ. of Salerno, Fisciano, Italy
Abstract :
By exploiting a novel analytical model of the open-circuit voltage decay (OCVD) applied to 4H-SiC pin diodes, the limitations of the OCVD method when used for carrier lifetime measurement of SiC epilayers are explored. Since the model is able to describe the transient of a generic diode when switched from arbitrary current level, it reveals a comprehensive tool to show the influence of the recombination velocity at the epilayer interfaces on the measurement method and to prove the effectiveness of the measurement technique also for very thick epilayers.
Keywords :
electron-hole recombination; p-i-n diodes; silicon compounds; wide band gap semiconductors; SiC; carrier lifetime measurement; epilayer interfaces; epilayers; generic diode; open circuit voltage decay; pin diodes; recombination velocity; semiconductor diodes; Analytical models; Charge carrier density; Charge carrier lifetime; Electric variables measurement; Radiative recombination; Semiconductor device modeling; Semiconductor diodes; Silicon carbide; Thermal conductivity; Voltage; 4H-SiC; Analytical model; OCVD; Recombination lifetime;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336692
