Design of a high-performance Millimeter-wave amplifier using specific modeling

Author

Bi, X.J. ; Guo, Yong Xin ; Arasu, M. Annamalai ; Zhang, M.S. ; Xiong, Y.Z. ; Je, M.K.

Author_Institution

Nat. Univ. of Singapore, Singapore, Singapore

fYear

2014

fDate

20-23 Jan. 2014

Firstpage

27

Lastpage

28

Abstract

In this design contest, the design methodology leading to a high performance Millimeter-wave amplifier in 0.13 μm SiGe BiCMOS is elaborated. Equivalent circuit models of the utilized cascode shielding structure are developed to assist the amplifier design. Meanwhile, final layouts of the passive connections are verified by 3D electromagnetic simulation in ANSYS HFSS. The implemented amplifier obtained a gain more than 45 dB in band, which is the gain record of silicon-based amplifiers in W-band.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; elemental semiconductors; equivalent circuits; field effect MIMIC; integrated circuit design; millimetre wave amplifiers; silicon; 3D electromagnetic simulation; ANSYS HFSS; W-band; design methodology; equivalent circuit model; gain record; high-performance millimeter-wave amplifier design; passive connection layouts; silicon germanium BiCMOS; silicon-based amplifiers; size 0.13 mum; specific modeling; utilized cascode shielding structure; Circuit stability; Couplings; Gain; Integrated circuit modeling; Metals; Solid modeling; Stability analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference (ASP-DAC), 2014 19th Asia and South Pacific

Conference_Location

Singapore

Type

conf

DOI

10.1109/ASPDAC.2014.6742857

Filename

6742857