Title :
Design of a high-performance Millimeter-wave amplifier using specific modeling
Author :
Bi, X.J. ; Guo, Yong Xin ; Arasu, M. Annamalai ; Zhang, M.S. ; Xiong, Y.Z. ; Je, M.K.
Author_Institution :
Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
In this design contest, the design methodology leading to a high performance Millimeter-wave amplifier in 0.13 μm SiGe BiCMOS is elaborated. Equivalent circuit models of the utilized cascode shielding structure are developed to assist the amplifier design. Meanwhile, final layouts of the passive connections are verified by 3D electromagnetic simulation in ANSYS HFSS. The implemented amplifier obtained a gain more than 45 dB in band, which is the gain record of silicon-based amplifiers in W-band.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; elemental semiconductors; equivalent circuits; field effect MIMIC; integrated circuit design; millimetre wave amplifiers; silicon; 3D electromagnetic simulation; ANSYS HFSS; W-band; design methodology; equivalent circuit model; gain record; high-performance millimeter-wave amplifier design; passive connection layouts; silicon germanium BiCMOS; silicon-based amplifiers; size 0.13 mum; specific modeling; utilized cascode shielding structure; Circuit stability; Couplings; Gain; Integrated circuit modeling; Metals; Solid modeling; Stability analysis;
Conference_Titel :
Design Automation Conference (ASP-DAC), 2014 19th Asia and South Pacific
Conference_Location :
Singapore
DOI :
10.1109/ASPDAC.2014.6742857
