Title :
Effects of process variations on the current in Schottky Barrier Source-Gated Transistors
Author :
Sporea, Radu A. ; Guo, Xiaojun ; Shannon, J.M. ; Silva, S.R.P.
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
Abstract :
The sensitivity of the drain current in Schottky barrier source-gated transistors to process variation is studied using computer simulations. It is shown that provided the device is designed correctly, the current is independent of source-drain separation and is insensitive to source length variations. However, uniform insulator thickness and precise control of the source barrier is needed if good current uniformity is to be obtained.
Keywords :
Schottky barriers; Schottky gate field effect transistors; Schottky barrier source-gated transistors; computer simulation; device design; process variation effects; source-drain separation; Circuit simulation; Contacts; Electrodes; FETs; Insulation; Schottky barriers; Semiconductivity; Semiconductor materials; Solid modeling; Thin film transistors; Schottky barrier; Source-gated transistor; polysilicon; process variations; thin-film transistor;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336693
