DocumentCode
2452243
Title
Effects of process variations on the current in Schottky Barrier Source-Gated Transistors
Author
Sporea, Radu A. ; Guo, Xiaojun ; Shannon, J.M. ; Silva, S.R.P.
Author_Institution
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
Volume
2
fYear
2009
fDate
12-14 Oct. 2009
Firstpage
413
Lastpage
416
Abstract
The sensitivity of the drain current in Schottky barrier source-gated transistors to process variation is studied using computer simulations. It is shown that provided the device is designed correctly, the current is independent of source-drain separation and is insensitive to source length variations. However, uniform insulator thickness and precise control of the source barrier is needed if good current uniformity is to be obtained.
Keywords
Schottky barriers; Schottky gate field effect transistors; Schottky barrier source-gated transistors; computer simulation; device design; process variation effects; source-drain separation; Circuit simulation; Contacts; Electrodes; FETs; Insulation; Schottky barriers; Semiconductivity; Semiconductor materials; Solid modeling; Thin film transistors; Schottky barrier; Source-gated transistor; polysilicon; process variations; thin-film transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-4413-7
Type
conf
DOI
10.1109/SMICND.2009.5336693
Filename
5336693
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