Zn diffusion-induced disordering in semi-insulating, p-doped, and n-doped GaAs/AlGaAs multilayered structures: a comparative study

Author

Ky, Nguyen Hong

Author_Institution

Inst. of Appl. Opt., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

55

Lastpage

58

Abstract

Secondary-ion mass spectrometry and photoluminescence measurements are used to study Zn diffusion into undoped, Be-doped and Si-doped identical GaAs/Al_0.2Ga_0.8As multilayered structures. The effective Zn diffusivity and the disordering rate in the undoped sample are larger than those in the Si-doped sample containing a high concentration of column-III vacancy (V_III), while they are smaller than those in the Be-doped sample that may contain column-III interstitials (I_III) A reduction of V_III concentration in the Si-doped sample and an increase of I_III concentration in the Be-doped sample are observed after Zn diffusion, Our model proposed on the basis of the “kick-out” mechanism explains well the experimental results

Keywords

III-V semiconductors; aluminium compounds; beryllium; diffusion; gallium arsenide; photoluminescence; secondary ion mass spectra; semiconductor doping; silicon; zinc; GaAs-Al_0.2Ga_0.8As:Zn,Be,Si; GaAs/Al_0.2Ga_0.8As:Zn,Be(Si); GaAs/AlGaAs multilayered structures; Zn diffusion-induced disordering; disordering rate; effective Zn diffusivity; photoluminescence; secondary-ion mass spectrometry; Doping; Gallium arsenide; Mass spectroscopy; Optical refraction; Optical variables control; Optoelectronic devices; Photoluminescence; Quantum well devices; Refractive index; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570877

Filename

570877