Title :
A comparative study of the defects in Fe-doped or undoped semi-insulating InP after high temperature annealing
Author :
Cherkaoui, K. ; Kallel, S. ; Marrakchi, G. ; Karoui, A.
Author_Institution :
Inst. Nat. des Sci. Appliquees, Villeurbanne, France
fDate :
29 Apr-3 May 1996
Abstract :
Fe-doped or undoped semi-insulating InP samples submitted to high temperature annealing process have been studied by Photoinduced current transient spectroscopy (PICTS) in order to compare the traps observed. The PICTS spectra of these samples show separately the presence of a multitude of traps having activation energies ranging from 0.12 eV to 0.66 eV. The FeIn trap level has not been clearly observed in all the samples. The comparison of the thermal parameters of the observed traps allows to assign some of them to a same defect. However the identification seems to be less evident concerning other traps and should be rather related to the properties of the starting material
Keywords :
III-V semiconductors; annealing; electron traps; indium compounds; iron; photoconductivity; 0.12 to 0.66 eV; InP:Fe; activation energies; high temperature annealing; photoinduced current transient spectroscopy; thermal parameters; traps; Annealing; Current measurement; Electron traps; Indium phosphide; Iron; Photoconductivity; Spectroscopy; Substrates; Temperature; Transient analysis;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570878
