DocumentCode
2452558
Title
Modeling MESFETs for intermodulation analysis of mixers and amplifiers
Author
Maas, S.A. ; Neilson, D.
fYear
1990
fDate
8-10 May 1990
Firstpage
1291
Abstract
An examination is made of the problem of modeling GaAs MESFETs for calculations of intermodulation and spurious responses. It is shown that an adequate model must express not only the absolute I-V characteristics of the device, but also the derivatives of these characteristics. A large-signal FET model that models these derivatives more realistically than do previous models is proposed.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; gallium arsenide; microwave amplifiers; mixers (circuits); nonlinear network analysis; semiconductor device models; solid-state microwave circuits; GaAs; MESFET modeling; absolute I-V characteristics; amplifiers; calculations of intermodulation; derivatives; intermodulation analysis; large-signal FET model; mixers; semiconductors; spurious response calculations; Equivalent circuits; FETs; Frequency; Gallium arsenide; MESFET circuits; MESFET integrated circuits; National electric code; Predictive models; Research and development; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location
Dallas, TX
Type
conf
DOI
10.1109/MWSYM.1990.99815
Filename
99815
Link To Document