3DCoB: A new design approach for Monolithic 3D Integrated circuits

Author

Sarhan, H. ; Thuries, S. ; Billoint, O. ; Clermidy, F.

Author_Institution

CEA-LETI, Grenoble, France

fYear

2014

fDate

20-23 Jan. 2014

Firstpage

79

Lastpage

84

Abstract

3D Monolithic Integration (3DMI) technology provides very high dense vertical interconnects with low parasitics. Previous 3DMI design approaches provide either cell-on-cell or transistor-on-transistor integration. In this paper we present 3D Cell-on-Buffer (3DCoB) as a novel design approach for 3DMI. Our approach provides a fully compatible sign-off physical implementation flow with the conventional 2D tools. We implement our approach on a set of benchmark circuits using 28nm-FDSOI technology. The sign-off performance results show 35% improvement compared to the same 2D design.

Keywords

buffer circuits; integrated circuit design; integrated circuit interconnections; silicon-on-insulator; three-dimensional integrated circuits; 2D design; 2D tools; 3D cell-on-buffer; 3DCoB; 3DMI design approach; 3DMI technology; FDSOI technology; benchmark circuits; cell-on-cell transistor integration; monolithic 3D integrated circuit design approach; size 28 nm; transistor-on-transistor integration; very high dense vertical interconnects; Capacitance; Clocks; Libraries; Logic gates; Routing; Standards; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference (ASP-DAC), 2014 19th Asia and South Pacific

Conference_Location

Singapore

Type

conf

DOI

10.1109/ASPDAC.2014.6742870

Filename

6742870