Experimental study of surface distortions in silicon carbide caused by diffusion welding

Author

Mizsei, János ; Korolkov, Oleg ; Sleptsuk, Natalja ; Toompuu, Jana ; Rang, Toomas

Author_Institution

Dept. of Electron Devices, Tech. Univ. of Budapest, Budapest, Hungary

fYear

2012

fDate

3-5 Oct. 2012

Firstpage

53

Lastpage

56

Abstract

This paper reports a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the last method has shown an increase in the density of surface states after the diffusion welding from 2×10¹⁵ cm^-2 to 3.5×10¹⁶ cm^-2.

Keywords

crystal defects; deep level transient spectroscopy; deep levels; electronic density of states; silicon compounds; surface states; welding; wide band gap semiconductors; DLTS method; Kelvin probe methods; SiC; deep level transient spectroscopy; deep levels; density of surface states; diffusion welding; silicon carbide crystal lattice; surface distortions; surface state identification; Capacitors; Electric potential; Kelvin; Semiconductor device measurement; Silicon carbide; Welding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Conference (BEC), 2012 13th Biennial Baltic

Conference_Location

Tallinn

ISSN

1736-3705

Print_ISBN

978-1-4673-2775-6

Type

conf

DOI

10.1109/BEC.2012.6376813

Filename

6376813