Design for Thermally Stable Multi-finger Power SiGe HBTs Using Finger Length-and Space-adjusted Methods

Author

Wan-Rong, Zhang ; Dong-Yue, Jin ; Jing-wei, Yang ; Li-Jian, He ; Yong-Ping, Sha ; Yang, Wang ; Wei, Zhang

Author_Institution

Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing

fYear

2006

fDate

26-29 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

For power bipolar transistors, the emitter-ballasting-resistor is usually used to improve the thermal stability. However, the ballasting-resistor degrades the output power, power gain, power-added efficiency (PAE) of the transistor. In this paper, the thermal stability can be improved substantially by adjusting either the spacing or length of the emitter fingers without using ballasting resistors. The temperature rise at the device center of the space-adjusted HBT is suppressed by reducing heat flow from adjacent fingers, and that of the length-adjusted HBT is suppressed by reducing heat generation in the region.

Keywords

Ge-Si alloys; heat transfer; heterojunction bipolar transistors; power transistors; thermal stability; SiGe; ballasting resistors; emitter fingers; finger length methods; heat flow; heat generation; multi finger power HBT; space adjusted methods; thermally stable; Bipolar transistors; Electronic ballasts; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Power generation; Silicon germanium; Space heating; Thermal degradation; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas, Propagation & EM Theory, 2006. ISAPE '06. 7th International Symposium on

Conference_Location

Guilin

Print_ISBN

1-4244-0162-3

Electronic_ISBN

1-4244-0163-1

Type

conf

DOI

10.1109/ISAPE.2006.353322

Filename

4168363