Title :
Design for Thermally Stable Multi-finger Power SiGe HBTs Using Finger Length-and Space-adjusted Methods
Author :
Wan-Rong, Zhang ; Dong-Yue, Jin ; Jing-wei, Yang ; Li-Jian, He ; Yong-Ping, Sha ; Yang, Wang ; Wei, Zhang
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing
Abstract :
For power bipolar transistors, the emitter-ballasting-resistor is usually used to improve the thermal stability. However, the ballasting-resistor degrades the output power, power gain, power-added efficiency (PAE) of the transistor. In this paper, the thermal stability can be improved substantially by adjusting either the spacing or length of the emitter fingers without using ballasting resistors. The temperature rise at the device center of the space-adjusted HBT is suppressed by reducing heat flow from adjacent fingers, and that of the length-adjusted HBT is suppressed by reducing heat generation in the region.
Keywords :
Ge-Si alloys; heat transfer; heterojunction bipolar transistors; power transistors; thermal stability; SiGe; ballasting resistors; emitter fingers; finger length methods; heat flow; heat generation; multi finger power HBT; space adjusted methods; thermally stable; Bipolar transistors; Electronic ballasts; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Power generation; Silicon germanium; Space heating; Thermal degradation; Thermal stability;
Conference_Titel :
Antennas, Propagation & EM Theory, 2006. ISAPE '06. 7th International Symposium on
Conference_Location :
Guilin
Print_ISBN :
1-4244-0162-3
Electronic_ISBN :
1-4244-0163-1
DOI :
10.1109/ISAPE.2006.353322
