DocumentCode
2453358
Title
Growth of GaN single crystals and properties of homoepitaxial MOCVD layers
Author
Baranowski, J.M. ; Porowski, S.
Author_Institution
Inst. of Exp. Phys., Warsaw Univ., Poland
fYear
1996
fDate
29 Apr-3 May 1996
Firstpage
77
Lastpage
84
Abstract
Recently high quality GaN plates have been grown from the solution in liquid gallium at N2 pressure up to 20 kbar and temperature close to 1600°C. These single crystals have been used as substrates for homoepitaxial growth of GaN layer by MOCVD. The influence of the polarity of the Ga or N terminated surface of the substrate on the quality of the homoepitaxial layer is discussed. The structural and optical properties of homoepitaxial layers are presented and discussed
Keywords
III-V semiconductors; crystal structure; gallium compounds; photoluminescence; reflectivity; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1600 C; 20 kbar; GaN; homoepitaxial MOCVD layers; optical properties; polarity; structural properties; Atomic force microscopy; Atomic layer deposition; Crystals; Epitaxial growth; Gallium nitride; MOCVD; Nitrogen; Optical materials; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location
Toulouse
Print_ISBN
0-7803-3179-6
Type
conf
DOI
10.1109/SIM.1996.570882
Filename
570882
Link To Document