• DocumentCode
    2453889
  • Title

    Non-binary WOM-codes for multilevel flash memories

  • Author

    Gabrys, Ryan ; Yaakobi, Eitan ; Dolecek, Lara ; SIEGEL, Peter H. ; Vardy, A. ; Wolf, Jack K.

  • Author_Institution
    Electr. Eng. Dept., Univ. of California, Los Angeles, Los Angeles, CA, USA
  • fYear
    2011
  • fDate
    16-20 Oct. 2011
  • Firstpage
    40
  • Lastpage
    44
  • Abstract
    A Write-Once Memory (WOM)-code is a coding scheme that allows information to be written in a memory block multiple times, but in a way that the stored values are not decreased across writes. This work studies non-binary WOM-codes with applications to flash memory. We present two constructions of non-binary WOM-codes that leverage existing high sum-rate WOM-codes defined over smaller alphabets. In many instances, these constructions provide the highest known sum-rates of the non-binary WOM-codes. In addition, we introduce a new class of codes, called level distance WOM-codes, which mitigate the difficulty of programming a flash memory cell by eliminating all small-magnitude level increases. We show how to construct such codes and state an upper bound on their sum-rate.
  • Keywords
    codes; flash memories; write-once storage; level distance WOM-codes; memory block; multilevel flash memories; non-binary write-once memory codes; Ash; Conferences; Decoding; Encoding; Upper bound; Vectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Theory Workshop (ITW), 2011 IEEE
  • Conference_Location
    Paraty
  • Print_ISBN
    978-1-4577-0438-3
  • Type

    conf

  • DOI
    10.1109/ITW.2011.6089490
  • Filename
    6089490