DocumentCode
2454003
Title
LightMOS a new power semiconductor concept dedicated for lamp ballast application
Author
Griebl, Erich ; Lorenz, Leo ; Pürschel, Marco
Author_Institution
Infineon Technol. AG, Munich, Germany
Volume
2
fYear
2003
fDate
12-16 Oct. 2003
Firstpage
768
Abstract
With the monolithic integration of a body diode into an IGBT structure, a very cost attractive solution for the lamp ballast application is introduced. Using the trench stop technology for lowest tail currents, switching losses and the overall power losses of the device are in the range of the latest MOSFET technologies using the compensation principle for lowest on state resistances.
Keywords
electric resistance; insulated gate bipolar transistors; isolation technology; lamp accessories; losses; power semiconductor diodes; IGBT structure; LightMOS; body diode; compensation principle; lamp ballast application; lowest tail currents; monolithic integration; on state resistances; power losses; power semiconductor; switching losses; trench stop; Costs; Electronic ballasts; Insulated gate bipolar transistors; Lamps; MOSFET circuits; Monolithic integrated circuits; Power MOSFET; Semiconductor diodes; Switching loss; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the
Print_ISBN
0-7803-7883-0
Type
conf
DOI
10.1109/IAS.2003.1257610
Filename
1257610
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