GaInP/GaAs HBTs: state of the art and future trends

Author

Wadsworth, S.D. ; Davies, R.A. ; Davies, I. ; Marsh, S.P. ; Peniket, N.A. ; Phillips, W.A. ; Wallis, R.H.

Author_Institution

GEC-Marconi Mater. Technol. Ltd., Towcester, UK

fYear

1998

fDate

29 Sep-2 Oct 1998

Firstpage

40

Lastpage

44

Abstract

The features of GaInP/GaAs HBT technology are illustrated by a description of the advanced general purpose GMMT B20 process, which has f_T and f_max typically 50 GHz and a breakdown voltage BV_CEO in excess of 10 volts. This process has been used for the design of analogue and digital circuits in order to demonstrate a capability for the fabrication of a range of high linearity and broadband circuits for communication systems. A survey of the current state of the art of HBTs is presented, focusing on the process variations needed to address specific applications, and including a comparison with HBT technologies developed on other material combinations. The key parameters determining high-frequency performance are identified in order to assess future trends and performance limitations, including reliability and thermal issues

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device breakdown; semiconductor device reliability; 50 GHz; GMMT B20 process; HBTs; III-V semiconductors; breakdown voltage; high-frequency performance; linearity; microwave bipolar transistors; process variations; reliability; thermal issues; Bipolar transistors; Digital circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Isolation technology; Manufacturing processes; Microwave devices; Power amplifiers; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on

Conference_Location

Pisa

Print_ISBN

0-7803-4900-8

Type

conf

DOI

10.1109/ISSSE.1998.738033

Filename

738033