InP-based HFETs and RTDs for high speed digital circuitry

Author

Prost, W. ; Auer, U. ; Pacha, C. ; Brennemann, A. ; Janssen, G. ; Bertenburg, R.M. ; Brockerhoff, W. ; Bushehri, E. ; Goser, K.F. ; Tegude, F.-J.

Author_Institution

Dept. of Solid State Electron., Gerhard-Mercator-Univ., Duisburg, Germany

fYear

1998

fDate

29 Sep-2 Oct 1998

Firstpage

45

Lastpage

49

Abstract

An InP-based HFET technology for monolithically integrated high speed digital circuits is described. A novel logic gate configuration is presented based on depletion mode HFETs using a nonlinear negative feedback for high speed operation. A possible implementation of enhancement mode transistors and the promising combination with a low-peak voltage RTD is also presented. A preliminary investigation on manufacturability of RTDs is given. We report on the realisation of RTD/E-HFET on InP as a building block for digital circuits and its applicability to a novel circuit architecture (multiple input threshold logic)

Keywords

III-V semiconductors; circuit feedback; field effect digital integrated circuits; high-speed integrated circuits; indium compounds; resonant tunnelling diodes; threshold logic; III-V semiconductors; InP; circuit architecture; depletion mode HFETs; enhancement mode transistors; high speed digital circuitry; logic gate configuration; low-peak voltage RTD; multiple input threshold logic; nonlinear negative feedback; Digital circuits; HEMTs; Indium phosphide; Integrated circuit technology; Logic circuits; Logic gates; MODFETs; Manufacturing; Negative feedback; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on

Conference_Location

Pisa

Print_ISBN

0-7803-4900-8

Type

conf

DOI

10.1109/ISSSE.1998.738034

Filename

738034