VLSI integration of SiGe epitaxial base bipolar transistors

Author

Mouis, M. ; Chantre, A.

Author_Institution

France Telecom, CNET, Meylan, France

fYear

1998

fDate

29 Sep-2 Oct 1998

Firstpage

50

Lastpage

55

Abstract

This paper presents the state of the art concerning integrated Si/Si_1-xGe_x/Si heterojunction bipolar transistors (SiGe HBTs), with special emphasis on what are the real strong points of the device, once integration constraints have been accounted for. A review of some representative technologies is given, with a tentative classification according to the tradeoff which has been chosen between performance, integrability and process complexity. Examples of low-cost integration of SiGe HBTs in an industrial BiCMOS technology are provided as an illustration

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF bipolar transistors; UHF integrated circuits; VLSI; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; Si-SiGe-Si; VLSI; heterojunction bipolar transistors; industrial BiCMOS technology; integrability; low-cost integration; process complexity; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Capacitance; Doping; Germanium silicon alloys; Heterojunctions; Radio frequency; Silicon germanium; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on

Conference_Location

Pisa

Print_ISBN

0-7803-4900-8

Type

conf

DOI

10.1109/ISSSE.1998.738035

Filename

738035