InP HBTs: state of the art and future trends

Author

Jäckel, Heinz

Author_Institution

Electron. Lab., Fed. Inst. of Technol., Zurich, Switzerland

fYear

1998

fDate

29 Sep-2 Oct 1998

Firstpage

62

Abstract

Summary form only given. The presentation will review the state of the art of InP-HBT-Technology, both on a device and circuit level, by outstanding examples of InP-HBT-technology achievements. In particular we will also focus on the role of this technology for next generation of >10 Gb/s Lightwave Communication Electronics. Finally we address future topics of HBT-research, including improved base-materials and doping techniques, enhanced functionality of RTD-HBTs or more speculative approaches, such as transferred substrate technology, all targeted ultimately to circuits capable of signal processing toward 100 Gb/s

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; InP; InP heterojunction bipolar transistor; RTD-HBT; base material; doping; lightwave communication electronics; signal processing; transferred substrate technology; Circuits; Electrons; Energy consumption; Heterojunction bipolar transistors; Indium phosphide; Laboratories; Low voltage; Spontaneous emission; Thermal conductivity; Thermal force;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on

Conference_Location

Pisa

Print_ISBN

0-7803-4900-8

Type

conf

DOI

10.1109/ISSSE.1998.738037

Filename

738037