Title :
InP HBTs: state of the art and future trends
Author_Institution :
Electron. Lab., Fed. Inst. of Technol., Zurich, Switzerland
fDate :
29 Sep-2 Oct 1998
Abstract :
Summary form only given. The presentation will review the state of the art of InP-HBT-Technology, both on a device and circuit level, by outstanding examples of InP-HBT-technology achievements. In particular we will also focus on the role of this technology for next generation of >10 Gb/s Lightwave Communication Electronics. Finally we address future topics of HBT-research, including improved base-materials and doping techniques, enhanced functionality of RTD-HBTs or more speculative approaches, such as transferred substrate technology, all targeted ultimately to circuits capable of signal processing toward 100 Gb/s
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; InP; InP heterojunction bipolar transistor; RTD-HBT; base material; doping; lightwave communication electronics; signal processing; transferred substrate technology; Circuits; Electrons; Energy consumption; Heterojunction bipolar transistors; Indium phosphide; Laboratories; Low voltage; Spontaneous emission; Thermal conductivity; Thermal force;
Conference_Titel :
Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on
Conference_Location :
Pisa
Print_ISBN :
0-7803-4900-8
DOI :
10.1109/ISSSE.1998.738037
