Title :
Design and implementation of a single bias FET source mixer
Author :
Lee, Sung-Woo ; Kim, Hwoa-Yuol ; Cho, Hong-Goo
Author_Institution :
Dept. of Electron. Eng., Kookmin Univ., Seoul, South Korea
fDate :
29 Sep-2 Oct 1998
Abstract :
A new type of FET source mixer with a single bias voltage has been presented. It is designed to operate at Vds=0[V] with only one positive supply voltage, which makes mixer circuits simple. The proposed mixer has shown improved stability and less sensitivity to both bias and LO power compared with conventional active mixers. It also shows lower conversion loss than that of diode mixers. The minimum conversion loss measured at RF frequency of 5.6 GHz is 0.6 dB for a LO frequency of 5.8 GHz
Keywords :
MESFET circuits; circuit diagrams; circuit stability; microwave mixers; 0.6 dB; 5.6 GHz; 5.8 GHz; LO power; conversion loss; design; frequency conversion; implementation; mixer circuits; sensitivity; single bias FET source mixer; stability; Circuit stability; FETs; Frequency conversion; Image converters; MESFETs; Mixers; RF signals; Radio frequency; Schottky diodes; Voltage;
Conference_Titel :
Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on
Conference_Location :
Pisa
Print_ISBN :
0-7803-4900-8
DOI :
10.1109/ISSSE.1998.738040
