Title :
CMOS VLSI technologies and RF application challenges
Author :
Fazan, P.C. ; Declercq, M.
Author_Institution :
Dept. of Electr. Eng., Fed. Inst. of Technol., Lausanne, Switzerland
fDate :
29 Sep-2 Oct 1998
Abstract :
This paper reviews the key steps that have led to today´s CMOS VLSI technologies. The discussion covers process technology, process integration, manufacturing topics, as well as implications for RF device design
Keywords :
CMOS integrated circuits; VLSI; integrated circuit manufacture; integrated circuit technology; radio equipment; CMOS VLSI technologies; CMOS device scaling; IC manufacture; RF application; RF chips; RF device design; devices interconnection; dry etching; lithography; process integration; process technology; CMOS technology; Costs; Electronics industry; Integrated circuit technology; Laboratories; Leg; MOS devices; Moore´s Law; Radio frequency; Very large scale integration;
Conference_Titel :
Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on
Conference_Location :
Pisa
Print_ISBN :
0-7803-4900-8
DOI :
10.1109/ISSSE.1998.738052
