Title :
Broad-band low-noise preamplifier design with GaAs MESFETs for optical communication systems
Author :
Bendé, André Boyoguéno ; Kaminska, Bozena
Author_Institution :
Dept. of Electr. Eng., Ecole Polytech. de Montreal, Que., Canada
fDate :
29 Sep-2 Oct 1998
Abstract :
Classical designs of transimpedance preamplifiers for optical receiver circuits use common-emitter (C-E) or common-source (C-S) input stages. The use of current-mode techniques to design photoreceivers for optical communication systems has been shown to offer significant bandwidth advantages over traditional voltage-mode designs. In this paper, we focus on the design of a wide-band, low-noise photoreceiver in GaAs using current-based amplifying techniques. A 3 dB bandwidth exceeding 3.5 GHz and, 48 dB of gain, along with 12pA/√(Hz) input noise have been simulated with a photodiode of 350 fF equivalent capacitance. Analysis of simulation results are presented, and a prototype has been sent for fabrication in the TQTRx 0.6 μm process from TriQuint Semiconductor´s technology
Keywords :
III-V semiconductors; MESFET integrated circuits; current-mode circuits; field effect digital integrated circuits; gallium arsenide; integrated circuit layout; optical receivers; preamplifiers; 0.6 micron; 3.5 GHz; 350 fF; 48 dB; GaAs; GaAs MESFETs; TQTRx; bandwidth; broad-band low-noise preamplifier design; current-based amplifying techniques; current-mode techniques; fabrication; input noise; optical communication systems; optical receiver; photodiode; photoreceiver; prototype; transimpedance preamplifiers; Bandwidth; Circuits; Gallium arsenide; MESFETs; Optical design; Optical fiber communication; Optical receivers; Preamplifiers; Voltage; Wideband;
Conference_Titel :
Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on
Conference_Location :
Pisa
Print_ISBN :
0-7803-4900-8
DOI :
10.1109/ISSSE.1998.738063
