DocumentCode
2454663
Title
Boron carbon nitride film containing hydrogen for 2nm node low-k interconnection
Author
Aoki, Higedmitsu ; Masuzumi, Takuroh ; Hara, Makoto ; Watanabe, Daisuke ; Kimura, Chiharu ; Sugino, Takushi
Author_Institution
Dept. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan
fYear
2009
fDate
27-29 April 2009
Firstpage
13
Lastpage
14
Abstract
We have investigated the properties of boron carbon nitride containing hydrogen (BCNH) film deposited by using tris (dimethylamino)boron (TMAB) gas. The dielectric constant (k) of the BCNH film was achieved as low as 1.8 by deposition with a low RP power (10 W). The film has a sufficient Young´s modulus as high as 26 GPa. In addition, k-value of BCNH film is more stable compared with conventional BCN film.
Keywords
Young´s modulus; boron compounds; films; integrated circuit interconnections; nitrogen compounds; permittivity; vapour deposition; BCNH; Young modulus; dielectric constant; power 10 W; size 22 nm; Boron; Hydrogen; Quadratic programming;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
978-1-4244-2784-0
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2009.5159270
Filename
5159270
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