Title :
Boron carbon nitride film containing hydrogen for 2nm node low-k interconnection
Author :
Aoki, Higedmitsu ; Masuzumi, Takuroh ; Hara, Makoto ; Watanabe, Daisuke ; Kimura, Chiharu ; Sugino, Takushi
Author_Institution :
Dept. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan
Abstract :
We have investigated the properties of boron carbon nitride containing hydrogen (BCNH) film deposited by using tris (dimethylamino)boron (TMAB) gas. The dielectric constant (k) of the BCNH film was achieved as low as 1.8 by deposition with a low RP power (10 W). The film has a sufficient Young´s modulus as high as 26 GPa. In addition, k-value of BCNH film is more stable compared with conventional BCN film.
Keywords :
Young´s modulus; boron compounds; films; integrated circuit interconnections; nitrogen compounds; permittivity; vapour deposition; BCNH; Young modulus; dielectric constant; power 10 W; size 22 nm; Boron; Hydrogen; Quadratic programming;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159270
