A novel Multi - Nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND Flash memory

Author

Liu, C.H. ; Lin, Y.M. ; Sakamoto, Y. ; Yang, R.J. ; Yin, D.Y. ; Chiang, P.J. ; Wei, H.C. ; Ho, C.Y. ; Chen, S.H. ; Hwang, H.P. ; Hung, C.H. ; Pittikoun, S. ; Aritome, S.

Author_Institution

Powerchip Semicond. Corp., Hsinchu, Taiwan

fYear

2009

fDate

27-29 April 2009

Firstpage

35

Lastpage

36

Abstract

Multinitridation ONO has been demonstrated for the first time. Significant improvement are obtained in NAND Flash performance and reliability. (1) 1V program voltage reduction owing to 10 A EOT (equivalant oxide thickness ) reduction (2) More than 20% tighter cell Vt distribution width can be achieved from ONO bird´s beak free due to supressing encroachment of gate re-oxidation by floating gate (FG) / top oxide nitridation. And also, (3) good data retention can be realized by applying plasma oxidation on bottom oxide to suppress the trap assisted charge loss. MN-ONO is a promising technology for high density NAND Flash beyond 40 nm generation.

Keywords

NAND circuits; flash memories; NAND Flash memory; equivalent oxide thickness reduction; floating gate; multinitridation ONO interpoly dielectric; plasma oxidation; size 40 nm; top oxide nitridation; trap assisted charge loss; Degradation; Dielectric substrates; Electron emission; High K dielectric materials; High-K gate dielectrics; Nonvolatile memory; Oxidation; Plasma applications; Plasma density; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-2784-0

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2009.5159280

Filename

5159280