Dynamic behaviour and ruggedness of advanced fast switching IGBTs and diodes

Author

Mauder, A. ; Laska, T. ; Lorenz, L.

Author_Institution

Infineon Technol. AG, Munich, Germany

Volume

2

fYear

2003

fDate

12-16 Oct. 2003

Firstpage

995

Abstract

The paper presents the latest developments of IGBTs and fast switching diodes. A detailed investigation of repetitive short circuit behaviour of the trench and field stop IGBT is discussed. The new field stop IGBT was developed with almost MOS-like (tail-less) turn-off behaviour. Driven by these new IGBT technologies an increased stress on the free wheeling diodes is exerted. The paper shows in detail the switching performance and electric stress of a diode turned off by an ultra-fast switching IGBT. Based on the internal processes during commutation requirements for the application are concluded.

Keywords

commutation; insulated gate bipolar transistors; isolation technology; power semiconductor diodes; power semiconductor switches; switching; MOS-like turn-off behaviour; commutation requirements; diode electric stress; fast switching IGBT; fast switching diodes; field stop IGBT; free wheeling diodes stress; internal processes; repetitive short circuit behaviour; stray inductance; switching performance; tail-less turn-off behaviour; trench IGBT; ultra-fast switching IGBT; Circuits; Costs; Diodes; Home appliances; Ice; Insulated gate bipolar transistors; Power electronics; Robustness; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the

Print_ISBN

0-7803-7883-0

Type

conf

DOI

10.1109/IAS.2003.1257660

Filename

1257660