Title :
Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation
Author :
Yu-Sheng Chen ; Wu, Tai-Yuan ; Tzeng, Pei-Jer ; Pang-Shiu Chen ; Lee, Heng-Yuan ; Lin, Cha-Hsin ; Chen, Pang-Shiu ; Tsai, Ming-Jinn
Author_Institution :
Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst. Chutung, Hsinchu, Taiwan
Abstract :
In this paper, the bipolar resistive switching memory using HfO2 film with a TiN/Ti bi-layer electrode is reported. A robust endurance (>106 cycles) and long data retention (>10 years at 200degC) of this memory device was achieved. The memory also shows fast operation speed (~10 ns), low operation power and capability of multi-level operation.
Keywords :
bipolar memory circuits; electrodes; hafnium compounds; low-power electronics; multilayers; random-access storage; titanium compounds; HfO2-TiN-Ti; bi-layer electrode; bipolar RRAM device fabrication; bipolar resistive switching memory; forming-free resistive memory; high speed multilevel operation; high-density memory; low power consumption; CMOS technology; Circuit testing; Hafnium oxide; Industrial electronics; Materials science and technology; Oxidation; Robustness; Switches; Tin; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159281
