Electric field investigation in high voltage power modules using finite element simulations and partial discharge measurements

Author

Frey, D. ; Schanen, Jl ; Augé, JL ; Lesaint, O.

Author_Institution

Lab. d´´Electrotechnique, Univ. Joseph Fourier, Grenoble, France

Volume

2

fYear

2003

fDate

12-16 Oct. 2003

Firstpage

1000

Abstract

The development of high voltage power module using IGBTs leads to serious problems concerning the electric field insulation. The values of these electric fields are very important regarding the capabilities of the dielectric gels used in the power packages. Solutions have to be developed to ensure limited field and good reliability. The aim of this paper is to show the interest of using finite element simulations in association with partial discharge measurements to determine and localize the maximum field values. Some solutions to lower them are also presented.

Keywords

dielectric materials; electric fields; finite element analysis; gels; insulated gate bipolar transistors; insulation; modules; partial discharge measurement; semiconductor device reliability; 5 kV; dielectric gels; electric field insulation; electric fields; finite element simulations; high voltage power modules; partial discharge measurements; power packages; Dielectric materials; Dielectrics and electrical insulation; Electric variables measurement; Finite element methods; Insulated gate bipolar transistors; Multichip modules; Partial discharge measurement; Partial discharges; Power measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the

Print_ISBN

0-7803-7883-0

Type

conf

DOI

10.1109/IAS.2003.1257662

Filename

1257662