DocumentCode :
2455005
Title :
Single-Metal Dual-Dielectric (SMDD) gate-first CMOS integration towards low VT and high performance
Author :
Ragnarsson, L-Å ; Schram, T. ; Röhr, E. ; Sebaai, F. ; Kelkar, P. ; Wada, M. ; Kauerauf, T. ; Aoulaiche, M. ; Cho, M.J. ; Kubicek, S. ; Lauwers, A. ; Hoffmann, T.Y. ; Absil, P.P. ; Biesemans, S.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2009
fDate :
27-29 April 2009
Firstpage :
49
Lastpage :
50
Abstract :
This paper overviews integration challenges of low-VT gate-first CMOS featuring one metal gate electrode and one host dielectric with Al2O3 and La2O3 cap-dielectrics for pMOS and nMOS respectively. The advantages and disadvantages of employed low EOT low VT enabling technologies are compared with respect to processing simplicity as well as device performance and reliability. The latest state-of-the art SMDD device results are reported.
Keywords :
CMOS integrated circuits; dielectric materials; semiconductor device reliability; Al2O3; La2O3; gate-first CMOS integration; host dielectric; metal gate electrode; nMOS; pMOS; single-metal dual-dielectric; Aluminum oxide; Art; CMOS technology; Dielectric devices; Electrodes; Etching; Hafnium oxide; MOS devices; Manufacturing; Resists;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2009.5159287
Filename :
5159287
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2455005
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